2025 Morphological transformation of (In,Ga)N nanoshells grown around pencil-like GaN nanowires. PHOTONICA 2025 J. Obradović, M. Tinoco, L. Monge Bartolomé... [+]
2024 ISOM at the IWN 2024 . ISOMers Jovana Obradovic and Zarko Gacevic have presented their work at the 12th International Workshop on Nitride Semiconductors in Hawaii(USA), held between 3–8 November,2024.
Jovana delivered the oral presentation "Insight into In incorporation into (In,Ga)N nanoshells grown around pencil-like GaN nanowires" and Zarko presented the poster "Influence of n-type and p-type doping on optical, structural and electrical properties of pencil-like GaN nanowires".
2024 Advanced packaging of GaN-based HEMTs. The PhD candidate will work on the design, modelling, and fabrication of advanced packaging architectures for the System-in-Package (SiP) integration of GaN-based High Electron Mobility Transistors (HEMTs) including:
• Optimization of various packaging architectures (wirebonding, embedded chip, and flip-chip) for high frequency and high power operation
• Synthesis of high thermal conductivity AlN and AlScN layers
• Integration of AlN and AlScN as interposers and heat dissipation layers
The research will be conducted at ISOM (www.isom.upm.es) and CEMDATIC (www.cemdatic.upm.es), Technical University of Madrid. The candidate will pursue an industrial PhD in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project “Chair UPM-INDRA in Microelectronics”
WHAT WE OFFER
• Three-year contract. Annual gross salary of 25,350 € and health and social benefits according to Spanish law
• Excellent facilities, international atmosphere, and partnering with industry
WHAT WE NEED
• A Master degree in Electronic/Telecommunication/Materials Engineering or Physics
• Proficiency in English, goal-oriented mindset, creativity, teamwork & communication skills. Previous research experience will be highly valued
• Applicants should send a motivation letter & CV to both Marta Clement (marta.clement@upm.es) and Jorge Pedrós (j.pedros@upm.es)
2024 High-performance GaN-based HEMTs. The PhD candidate will work on the design, modelling, and fabrication of highperformance GaN-based High Electron Mobility Transistors (HEMTs) including:
• Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures
• Exploration of the integration of 2D materials for enhanced HEMT performance
The research will be conducted at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es), Technical University of Madrid. The candidate will pursue an industrial PhD in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project "Chair UPM-INDRA in Microelectronics".
WHAT WE OFFER
• Three-year contract. Annual gross salary of 25,350 € and health and social benefits according to Spanish law
• Excellent facilities, international atmosphere, and partnering with industry
WHAT WE NEED
• A Master degree in Electronic/Telecommunication/Materials Engineering or Physics
• Proficiency in English, goal-oriented mindset, creativity, teamwork & communication skills. Previous research experience will be highly valued
• Applicants should send a motivation letter & CV to Jorge Pedrós (j.pedros@upm.es)
2024 AGANTI: Generación de capacidades en fabricación GAN y tecnología de empaquetado avanzado.. PCD240920B187
2024 Postdoctoral Position in GaN HEMT Technology. The research will be conducted at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es), Technical University of Madrid, within a partnership with INDRA Sistemas S.A., a Spanish multinational company, in the framework of the PERTE Chip actions funded by the Spanish Ministry of Science and CDTI.
The postdoc will work on the design, fabrication, and characterization of GaN-based High Electron Mobility Transistors (HEMTs) for high power and high frequency operation... [+]
2024 El Mundo: Elías Muñoz y el primer videojuego español. Hoy el diario El Mundo publica un reportaje sobre la historia del primer videojuego desarrollado en España, que se presentó en unas jornadas organizadas por nuestro Presidente honorífico, Prof. Elías Muñoz Merino. La pieza puede leerse aquí: https://short.upm.es/0yk19
2024 El ISOM en el 11F 2024 . Investigadores del ISOM (UPM) han ofrecido un encuentro con estudiantes de bachillerato sobre dispositivos de energía sostenible, eficiente, englobados en el pacto verde europeo. Tras un emocionante Kahoot con preguntas sobre la charla, las dos alumnas ganadoras se llevaron de premio un termo de la UPM y finalmente, durante el taller interactivo, los alumnos disfrutaron con demostradores de supercondensadores y células solares.
2023 AlGaN and InGaN non-polar pseudo-substrates grown by MBE based on ordered coalescence of nanocrystals. nGaN tandem solar cell grown by MBE. ISO.ECP.005
2023 MOSDOP: Simulación molecular de organización autónoma y dirigida de sistemas basados en polímeros. ISO.MSL.002
2023 Simulación molecular de organización autónoma y dirigida de sistemas basados en polímeros. C220920B152
2023 Organization.
2023 Palabras clave. ISOM is an institution devoted to research, development, and innovation as well as to technology transfer to the industry QUANTUM GROWTH GAN MOLECULAR BEAM GROWTH MAGNETIC OPTICAL EPITAXY LAYERS CRECIMIENTO MOLECULARES EPITAXIA HACES MAGNETICO OPTICO CAPAS ISOM UPM SEMICONDUCTOR PLASMONICS SEMICONDUCTORES GAAS
2023 Jovana. Bachelor of Science in Electrical Engineering and Coputer Science (2021) and Master of Science in Electrical Engineering and Computer Science (2022), both in University of Belgrade, School of Electrical Engineering. Currently enrolled as a PhD student in Semiconductor Devices Group, working on GaN nanowires for their use as single photon sources.
2023 ISOM`s activities are divided in two main areas. ISOM is a research institution organized in two groups devoted to semiconductor and magnetic devices, respectively. Click/tap for more info.
2023 X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy. J. Appl. Crystallogr. Kaganer, Vladimir M.; Konovalov, Oleg... [+]
2022 Nanoscale Engineering of Materials and Interfaces for High Performance Rechargeable Batteries
. Desde el ISOM y en colaboración con IRIDA, tenemos el placer de invitarles al próximo Workshop que vamos a organizar en la Universidad Politécnica de Madrid …”
2022 Nano-structured optoelectronic devices. Desde el ISOM y en colaboración con IRIDA, tenemos el placer de invitarles al próximo Workshop que vamos a organizar en la Universidad Politécnica de Madrid …”
2022 Quick view on our research exchange and interaction with Chonqing Univ. (China) on next perovskites and oxides photovoltaics. Desde el ISOM y en colaboración con IRIDA, tenemos el placer de invitarles al próximo Workshop que vamos a organizar en la Universidad Politécnica de Madrid ppeee
2022 Workshop organized by ISOM-IRIDA, “Maskless Direct Writing and 3D Lithography: Capabilities and Applications”. From ISOM and in collaboration with IRIDA, we are pleased to invite you to the next Workshop that we will organize at the Universidad Politécnica de Madrid ETSI Telecomunicaciones on April 5, 2022, at 10:00 am, in the Hall of Building C of the ETS Ingenieros de Telecomunicación of the Universidad Politécnica de Madrid. Avenida Complutense 30. 28040 Madrid.
