2025 HRS2025/281 Asistente de investigación para fabricación de dispositivos optoelectrónicos/Research Assistant for Optoelectronic Device Manufacturing. -Fabrication of optoelectronic devices in clean room facilities
-Material growth by Physical Vapour methods
-Material characterization
-Device characterization
-Results analysis
2025 HRS2025/281 Asistente de investigación para fabricación de dispositivos optoelectrónicos/Research Assistant for Optoelectronic Device Manufacturing. -Fabrication of optoelectronic devices in clean room facilities
-Material growth by Physical Vapour methods
-Material characterization
-Device characterization
-Results analysis
2025 Álvaro . Bachelor/APOSTROFE/s degree in Physics (UAM) and MSc in Renewable Energies and Fuels for the Future (UAM). Currently pursuing a PhD focused on the growth of III-V dilute-nitride alloy short-period superlattices by Molecular Beam Epitaxy and their characterization to fabricate high-efficiency solar cells.
2024 Postdoctoral Position in MBE growth of III-Nitrides. The postdoc will work on the growth by MBE, characterization (XRD,SEM,AFM,PL,CL) and technological processing of nanostructures and devices based on III-Nitrides
2024 Postdoctoral Position in MBE growth of III-Nitrides. The postdoc will work on the growth by MBE, characterization (XRD,SEM,AFM,PL,CL) and technological processing of nanostructures and devices based on III-Nitrides
The postdoc will work on the growth by MBE, characterization (XRD, SEM... [+]
2024 Carlos. Received a PhD in Materials Science from the University of Paris-Saclay for his work at IPVF and C2N on the epitaxial growth of III-V materials on graphene. His research interests focus on novel materials and nanostructures for optoelectronic devices including solar cells and single photon sources.
2024 Dr Roman Engel-Herbert talk on Research Prospects for MBE - Where are we heading?. Research Prospects for MBE - Where are we heading?
Dr. Roman Engel-Herbert in this talk, Prof. Roman Engel-Herbert will present the fundamental challenges present of using a conventional molecular beam epitaxy approach for the growth of complex oxides and will outline an alternative - a hybrid synthesis approach - as a possible way out to overcome the existing challenges. Promising results obtained by MBE of hybrid oxides will be presented along with the most recent advances in material quality achieved in thin films of complex oxides with perovskite structure. A perspective will be given on the possibility of extending this growth method to larger substrates and at higher growth rates, which would highlight its potential importance in an industrial environment. MBE could again be the growth technique that enables the translation of fundamental advances from the laboratory to industry, playing a key role in the realization of the second quantum revolution..
Short biography
Prof. Engel-Herbert is the Director of the Paul-Drude-Institute for Solid State Electronics, a Leibniz Institute in the Forschungsverbund Berlin e.V., and is holding a W3-S faculty position at the Humboldt University of Berlin.
His research interests are centered around the growth of thin films and heterostructures using molecular beam epitaxy of III-V and III-nitride compound semiconductors, and in particular of functional oxide-, and chalcogenidebased materials. This includes the scale-up and integration of these compounds with established material platforms, as well as the development of innovative thin film synthesis methods to achieve unprecedented control over stoichiometry and layering. Synthesis efforts to rapidly develop and mature these novel material systems are complemented by property characterization and device fabrication activities to explore and harness the so far unexploited electronic and optical functionalities arising from sizeable electron correlation effects, strong spin-orbit coupling, and non-trivial topological states for applications in quantum technology. The properties of these rationally designed and artificially crafted crystal structures are tailored by arranging elements with atomic precision.
Engel-Herbert has co-pioneered hybrid MBE that enables the growth of complex oxides with an unprecedented level of perfection. He has recently demonstrated that perovskite thin films can be integrated on Si using this scalable growth technique and has made substantial contribution to the development of high-k dielectrics on compound semiconductors for beyond Si CMOS technology. His most notifiable breakthrough was the discovery of a novel design paradigm for transparent conductors.
24/01/2024, 12:00, Salón de grados... [+]
2024 Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001). J. Appl. Phys. Ben Saddik, K; Fernández-Garrido, S; Volkov... [+]
2023 Postdoctoral Position (MBE quantum dots). Molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures.
ISOM UPM offers a postdoctoral position for a highly motivated postdoc with high academic performance, strongly determined to participate and contribute to a breakthrough project on the subject of quantum communications.
The candidate will work on the molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures.
The research will be carried out at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es) of Universidad Politécnica de Madrid, in collaboration with renowned partners inside and outside Spain.
2023 Ph.D. in Physical Sciences or Materials Science. Graphene growth by CVD and its subsequent characterization by AFM and electrical techniques. Deposition of graphene and 2 D materials on solar cells and supercapacitors by implementing a deterministic transfer system. Functionalization of supercapacitors by electrochemical techniques and electrical characterization of the devices by various measurement techniques to study their electrical properties.
2023 Material growth.
2023 Palabras clave. ISOM is an institution devoted to research, development, and innovation as well as to technology transfer to the industry QUANTUM GROWTH GAN MOLECULAR BEAM GROWTH MAGNETIC OPTICAL EPITAXY LAYERS CRECIMIENTO MOLECULARES EPITAXIA HACES MAGNETICO OPTICO CAPAS ISOM UPM SEMICONDUCTOR PLASMONICS SEMICONDUCTORES GAAS
2023 Álvaro de Guzmán. Professor of Electronic Engineering. PhD in Telecommunication Engineering (UPM, 2000). Field of research: III-As based semiconductor lasers, IR quantum photodetectors, and growth by MBE. Post-Doc at the CRHEA-CNRS (France) and 3 years as senior scientist at the Paul Drude Institut (Berlin, Germany). Currently head of the III-As Molecular Beam Epitaxial facility.
2023 Alberto. Assistant professor at UPM. PhD by UPM (2017) with stays at MIT (USA) and TUM (Germany). Expertise in the Graphene & 2D materials team improving graphene growth, transfer and technology. He is currently working on graphene sensors for biomedical applications.
2023 Amalia. Postdoctoral researcher at ISOM Nitrides group. Degree in Physics (UCM). Master in Materials Engineering (UPM). PhD in Electronic Systems Engineering (UPM, 2021). Currently working on the growth by Molecular Beam Epitaxy and charaterization of III-Nitrides nanostructures and films.
2023 Miguel Ángel. Professor of Electronic Engineering since 2020 at UPM. Obtained B.Sc. (1991) and M.Sc.(1993) in Electrical Engineering (Brown University (USA)). PhD in Telecommunication Engineering (UPM, 2000). Field of research: growth by MBE of III-V semiconductors, and their characterization by different techniques (electrical, optical and structural). Current interests include nitride-based nanostructures and devices.
2023 Materiales Disruptivos Bidimensionales (MAD2D-CM)-UPM1. Chemical vapour deposition of graphene. Optical characterization by Raman spectroscopy. Fabrication of biocompatible sensors. Electrochemically-driven experiments with cells. Cell growth and viability experiments.
2023 Development of novel Telecom single photon sources. ISOM UPM offers a postdoctoral position for a highly motivated postdoc with high academic performance, strongly determined to participate and contribute to a breakthrough project on the subject of quantum
communications.
The candidate will work on the molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical
characterization of the nanostructures.
The research will be carried out at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es) of Universidad Politécnica de Madrid, in collaboration with renowned partners inside
and outside Spain.
2022 Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices. Appl. Surf. Sci. Braza, V; Ben, T; Flores... [+]
2022 Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate. Nanomaterials Ruiz, N; Fernandez, D; Luna... [+]
