2025 Morphological transformation of (In,Ga)N nanoshells grown around pencil-like GaN nanowires. PHOTONICA 2025 J. Obradović, M. Tinoco, L. Monge Bartolomé... [+]
2024 ISOM at the IWN 2024 . ISOMers Jovana Obradovic and Zarko Gacevic have presented their work at the 12th International Workshop on Nitride Semiconductors in Hawaii(USA), held between 3–8 November,2024.
Jovana delivered the oral presentation "Insight into In incorporation into (In,Ga)N nanoshells grown around pencil-like GaN nanowires" and Zarko presented the poster "Influence of n-type and p-type doping on optical, structural and electrical properties of pencil-like GaN nanowires".
2024 Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001). J. Appl. Phys. Ben Saddik, K; Fernández-Garrido, S; Volkov... [+]
2023 AlGaN and InGaN non-polar pseudo-substrates grown by MBE based on ordered coalescence of nanocrystals. nGaN tandem solar cell grown by MBE. ISO.ECP.005
2023 Solid State Lighting. The generation of light from solid state sources has an enormous importance globally and ISOM has a precesnce in the reserach community involved in the development and enhancemente of these light sources based on III Nitride LEDs grown on pseudosubstrates
2023 X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy. J. Appl. Crystallogr. Kaganer, Vladimir M.; Konovalov, Oleg... [+]
2022 Luminescence properties of GaP1-xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy. Compound Semiconductor Week (AnnArbor, Michigan. . 2022)
2022 Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx. SemiconNano 2021 (Milano. Italia. 2022)....
2022 Enhanced radiative efficiency in GaN nanowires grown on sputtered TiNx. Nanowire Week 2022 (Chamonix. Francia. 2022)
2022 Growth modes and chemical phase separation in GaP1-xNx layers grown by chemical beam epitaxy on nominally (001)-oriented GaP-on-Si. MRS, Spring Meeting (Online. . 2022)....
2021 Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy. Nanotechnology Gacevic, Z; Grandal, J; Guo... [+]
2019 Ga(In)N nanowires grown by MBE: nanotransistors and quantum light emitters. 20th EuroMBE 2019. Lenggries (Germany)
2019 Structural and morphological characterization of the Cd-rich region in Cd1-x ZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition. Thin Solid Films Huerta-Barbera, A; de Prado, E; Martinez-Tomas... [+]
2018 Effect of different buffer layers on the quality of InGaN layers grown on Si. AIP Adv. Gomez, VJ; Grandal, J; Nunez-Cascajero... [+]
2018 III-Nitride Nanostructures grown by MBE: Basics and Applications. Compound Semiconductor Week 2018. Boston (USA)
2018 Ultrafast Carrier dynamics of In(x)Ga1(-x)N nanostructures grown directly on Si (111). Opt. Mater. Kumar, P; Devi, P; Rodriguez... [+]
2017 Ga(In)N Nanowires Grown by Molecular Beam Epitaxy: From Quantum Light Emitters to Nanotransistors. Gacevic, Z; Calleja, E... [+]
2016 Comparative study of single InGaN layers grown on Si(111) and GaN(0001) templates: The role of surface wetting and epitaxial constraint. J. Cryst. Growth Gomez, VJ; Gacevic, Z; Soto-Rodriguez... [+]
2016 Improving optical performance of GaN nanowires grown by selective area growth homoepitaxy: Influence of substrate and nanowire dimensions. Appl. Phys. Lett. Aseev, P; Gacevic, Z; Torres-Pardo... [+]
2016 Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter. Mater. Sci. Semicond. Process Bengoechea-Encabo, A; Albert, S; Sanchez-Garcia... [+]
