2017 A novel induction-based device for the measurement of the complex magnetic susceptibility. Sens. Actuator A-Phys. Michelena, MD; Una, JLM; Jimenez... [+]
2017 A Si-Compatible Fabrication Process for Scaled Self-Aligned InGaAs FinFETs. IEEE Trans. Semicond. Manuf. Vardi, A; Lin, J; Lu... [+]
2017 A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls. Beilstein J. Nanotechnol. Barrios, CA; Canalejas-Tejero, V... [+]
2017 An analysis of the surface-normal coupling efficiency of a metal grating coupler embedded in a Scotch tape optical waveguide. Opt. Commun. Barrios, CA; Canalejas-Tejero, V... [+]
2017 Deep-level spectroscopy in metal-insulator-semiconductor structures. J. Phys. D-Appl. Phys. Kurtz, A; Munoz, E; Chauveau... [+]
2017 Depinning process of magnetic domain walls in cylindrical nanowires with a chemical constraint. J. Phys. D-Appl. Phys. Castilla, D; Maicas, M; Prieto... [+]
2017 Determination of fundamental optical constants of Zn2SnO4 films. Semicond. Phys. Quant. Salohub, AO; Voznyi, AA; Klymov... [+]
2017 Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs. IEEE Electron Device Lett. Gao, Z; Romero, MF; Redondo-Cubero... [+]
2017 Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires. ACS Photonics Gacevic, Z; Holmes, M; Chernysheva... [+]
2017 Ga(In)N Nanowires Grown by Molecular Beam Epitaxy: From Quantum Light Emitters to Nanotransistors. Gacevic, Z; Calleja, E... [+]
2017 Identifying weakly-interacting single domain states in Ni nanowire arrays by FORC. J. Alloy. Compd. Proenca, MP; Sousa, CT; Ventura... [+]
2017 Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure. IEEE Electron Device Lett. Romero, MF; Bosca, A; Pedros... [+]
2017 Influence of the thermal contact resistance in current-induced domain wall depinning. J. Phys. D-Appl. Phys. Lopez, C; Ramos, E; Munoz... [+]
2017 Intersubband absorption in m-plane ZnO/ZnMgO MQWs. Bajo, MM; Tamayo-Arriola, J; Jollivet... [+]
2017 Laterally biased structures for room temperature operation of quantum-well infrared photodetectors. J. Cryst. Growth Guzman, A; Gargallo-Caballero, R; Lu... [+]
2017 MBE growth of ordered III-nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates (Conference Presentation).
2017 Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure. IEEE Trans. Power Electron. Cucak, D; Vasic, M; Garcia... [+]
2017 Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process. Nanotechnology Gonzalez, D; Braza, V; Utrilla... [+]
2017 Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications. Nanoscale Res. Lett. Braza, V; Reyes, DF; Gonzalo... [+]
2017 Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates. Nanotechnology Bengoechea-Encabo, A; Albert, S; Muller... [+]
