2025 HRS2025/241, PhD contract. The Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es) of Universidad Politécnica de Madrid (ISOM-UPM), a Spanish major scientific facility in optoelectronics, offers a position for a highly motivated PhD student to contribute to a breakthrough project funded by Spanish Ministry of Science and Innovation on the subject of quantum communications.
The student will work on developing novel semiconductor quantum dot structures for single photon emitters, a key component of the future quantum technologies that will revolutionize society. He/she will develop nanostructures by molecular beam epitaxy (MBE) and will perform their structural and optical characterization by using atomic force microscopy (AFM), scanning electron microscopy (SEM), x-ray diffraction (XRD), and photoluminescence spectroscopy (PL).
The research will be carried out at ISOM-UPM, but in close collaboration with the project partners that will provide state of the art transmission electron microscopy (IMEYMAT-UCA) and quantum nano-optics simulation and characterization (IMN-CNM-CSIC), as well as with renowned partners outside Spain. Furthermore, the student will do a minimum of 3 months in a renowned foreign research center and will obtain the International PhD Mention.
The student will work on developing novel semiconductor quantum dot structures for single photon emitters, a key component of the future quantum technologies that will revolutionize society. He/she will develop nanostructures by molecular beam epitaxy (MBE) and will perform their structural and optical characterization by using atomic force microscopy (AFM), scanning electron microscopy (SEM)... [+]
2025 Álvaro . Bachelor/APOSTROFE/s degree in Physics (UAM) and MSc in Renewable Energies and Fuels for the Future (UAM). Currently pursuing a PhD focused on the growth of III-V dilute-nitride alloy short-period superlattices by Molecular Beam Epitaxy and their characterization to fabricate high-efficiency solar cells.
2025 PhD contract in Technology and Materials Technology. The candidate will develop semiconductor nanostructures by molecular beam epitaxy (MBE) and will perform their structural and optical characterization. Device fabrication and optoelectronic characterization will also be performed by the candidate.
2024 Seminar on the Angstrom AMOD e-beam evaporator by J. García-Arisco. . Seminar on the Angstrom AMOD e-beam evaporator by J. García-Arisco.
2024 High-performance GaN-based HEMTs. The PhD candidate will work on the design, modelling, and fabrication of highperformance GaN-based High Electron Mobility Transistors (HEMTs) including:
• Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures
• Exploration of the integration of 2D materials for enhanced HEMT performance
The research will be conducted at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es), Technical University of Madrid. The candidate will pursue an industrial PhD in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project "Chair UPM-INDRA in Microelectronics".
WHAT WE OFFER
• Three-year contract. Annual gross salary of 25,350 € and health and social benefits according to Spanish law
• Excellent facilities, international atmosphere, and partnering with industry
WHAT WE NEED
• A Master degree in Electronic/Telecommunication/Materials Engineering or Physics
• Proficiency in English, goal-oriented mindset, creativity, teamwork & communication skills. Previous research experience will be highly valued
• Applicants should send a motivation letter & CV to Jorge Pedrós (j.pedros@upm.es)
2024 III-V semiconductor nanostructures prepared by molecular beam epitaxy (MBE). The candidate will mainly perform structural, morphological, electrical and optical characterization of III-V semiconductor nanostructures prepared by molecular beam epitaxy (MBE).
2024 Research Scientist Assistant. The candidate will mainly perform structural, morphological, electrical and optical characterization of III-V semiconductor nanostructures prepared by molecular beam epitaxy (MBE).
2024 Nanostructures by molecular beam epitaxy (MBE). The candidate will develop nanostructures by molecular beam epitaxy (MBE) and will perform their structural and optical characterization. Device fabrication and optoelectronic characterization will also be performed by the candidate.
2024 Fabricación de dispositios en sala blanca mediante litografía ebeam, fotolitografía, ICP-RIE y caracterización eléctrica y por AFM.
2024 Development of novel Telecom single photon sources. The postdoc will work on the molecular beam epitaxy (MBE) of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures. The work will take place within the framework of regional, national and European projects.
The research will be carried out at ISOM-UPM, but in close collaboration with groups providing state of the art transmission electron microscopy TEM (D.González, IMEYMAT-UCA) and quantum nano-optics simulation and characterization (J.M.Llorens and B.Alén, IMN-CNM-CSIC), as well as with renowned partners outside Spain.
2024 Dr Roman Engel-Herbert talk on Research Prospects for MBE - Where are we heading?. Research Prospects for MBE - Where are we heading?
Dr. Roman Engel-Herbert in this talk, Prof. Roman Engel-Herbert will present the fundamental challenges present of using a conventional molecular beam epitaxy approach for the growth of complex oxides and will outline an alternative - a hybrid synthesis approach - as a possible way out to overcome the existing challenges. Promising results obtained by MBE of hybrid oxides will be presented along with the most recent advances in material quality achieved in thin films of complex oxides with perovskite structure. A perspective will be given on the possibility of extending this growth method to larger substrates and at higher growth rates, which would highlight its potential importance in an industrial environment. MBE could again be the growth technique that enables the translation of fundamental advances from the laboratory to industry, playing a key role in the realization of the second quantum revolution..
Short biography
Prof. Engel-Herbert is the Director of the Paul-Drude-Institute for Solid State Electronics, a Leibniz Institute in the Forschungsverbund Berlin e.V., and is holding a W3-S faculty position at the Humboldt University of Berlin.
His research interests are centered around the growth of thin films and heterostructures using molecular beam epitaxy of III-V and III-nitride compound semiconductors, and in particular of functional oxide-, and chalcogenidebased materials. This includes the scale-up and integration of these compounds with established material platforms, as well as the development of innovative thin film synthesis methods to achieve unprecedented control over stoichiometry and layering. Synthesis efforts to rapidly develop and mature these novel material systems are complemented by property characterization and device fabrication activities to explore and harness the so far unexploited electronic and optical functionalities arising from sizeable electron correlation effects, strong spin-orbit coupling, and non-trivial topological states for applications in quantum technology. The properties of these rationally designed and artificially crafted crystal structures are tailored by arranging elements with atomic precision.
Engel-Herbert has co-pioneered hybrid MBE that enables the growth of complex oxides with an unprecedented level of perfection. He has recently demonstrated that perovskite thin films can be integrated on Si using this scalable growth technique and has made substantial contribution to the development of high-k dielectrics on compound semiconductors for beyond Si CMOS technology. His most notifiable breakthrough was the discovery of a novel design paradigm for transparent conductors.
24/01/2024, 12:00, Salón de grados... [+]
2024 Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001). J. Appl. Phys. Ben Saddik, K; Fernández-Garrido, S; Volkov... [+]
2024 Development of novel Telecom single photon sources. Position for a highly motivated PhD student to contribute to a breakthrough project funded by Spanish Ministry of Science and Innovation on the subject of quantum communications
The postdoc will work on the molecular beam epitaxy (MBE) of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures. The work will take place within the framework of regional, national and European projects.
The research will be carried out at ISOM-UPM, but in close collaboration with groups providing state of the art transmission electron microscopy TEM (D.González, IMEYMAT-UCA) and quantum nano-optics simulation and characterization (J.M.Llorens and B.Alén, IMN-CNM-CSIC), as well as with renowned partners outside Spain.
REQUIREMENTS:
A PhD in the area of semiconductor nanostructures, preferentially in the epitaxial growth and characterization of quantum dots for single photon emission.
A degree in: Physics, Electrical/Telecommunication/Material Engineering or in a similar area.
Full professional competence in English.
Ability to work both independently and collaboratively.
JOB CONDITIONS:
Two-year contract; extendable.
Annual Gross Salary: 30,000 € - 35,000 €; commensurate with experience.
Health and Social benefits included according to Spanish law.
Work in a highly competitive international environment.
APPLICATION:
Send a short CV, a short motivation letter and copy of your PhD and university degree certificate to Jose María Ulloa (jmulloa@isom.upm.es) or Sergio Fernández (sergio.fernandezga@upm.es)
2023 Postdoctoral Position (MBE quantum dots). Molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures.
ISOM UPM offers a postdoctoral position for a highly motivated postdoc with high academic performance, strongly determined to participate and contribute to a breakthrough project on the subject of quantum communications.
The candidate will work on the molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical characterization of the nanostructures.
The research will be carried out at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es) of Universidad Politécnica de Madrid, in collaboration with renowned partners inside and outside Spain.
2023 Metal Evaporators (Joule/e-beam).
2023 Palabras clave. ISOM is an institution devoted to research, development, and innovation as well as to technology transfer to the industry QUANTUM GROWTH GAN MOLECULAR BEAM GROWTH MAGNETIC OPTICAL EPITAXY LAYERS CRECIMIENTO MOLECULARES EPITAXIA HACES MAGNETICO OPTICO CAPAS ISOM UPM SEMICONDUCTOR PLASMONICS SEMICONDUCTORES GAAS
2023 Álvaro de Guzmán. Professor of Electronic Engineering. PhD in Telecommunication Engineering (UPM, 2000). Field of research: III-As based semiconductor lasers, IR quantum photodetectors, and growth by MBE. Post-Doc at the CRHEA-CNRS (France) and 3 years as senior scientist at the Paul Drude Institut (Berlin, Germany). Currently head of the III-As Molecular Beam Epitaxial facility.
2023 Amalia. Postdoctoral researcher at ISOM Nitrides group. Degree in Physics (UCM). Master in Materials Engineering (UPM). PhD in Electronic Systems Engineering (UPM, 2021). Currently working on the growth by Molecular Beam Epitaxy and charaterization of III-Nitrides nanostructures and films.
2023 Development of novel Telecom single photon sources. ISOM UPM offers a postdoctoral position for a highly motivated postdoc with high academic performance, strongly determined to participate and contribute to a breakthrough project on the subject of quantum
communications.
The candidate will work on the molecular beam epitaxy (MBE) growth of novel Sb-containing quantum dot architectures with emission at the telecom O and C-bands, as well as in the structural and optical
characterization of the nanostructures.
The research will be carried out at the Institute for Optoelectronic Systems and Microtechnology (www.isom.upm.es) of Universidad Politécnica de Madrid, in collaboration with renowned partners inside
and outside Spain.
2023 X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy. J. Appl. Crystallogr. Kaganer, Vladimir M.; Konovalov, Oleg... [+]
