2005 (Al,Ga,In)N-based UV and VIS photodetectors. Munoz, E; Pau, JL; Rivera... [+]
2005 Analysis of the room temperature performance of 1.3-1.52 mu m GaInNAs/GaAs LDs grown by MBE. Hierro, A; Ulloa, JM; Montes... [+]
2005 Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy. Phys. Rev. B Ristic, J; Rivera, C; Calleja... [+]
2005 Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111). Phys. Rev. Lett. Ristic, J; Calleja, E; Trampert... [+]
2005 Correlation between the performance of double-barrier quantum-well infrared photodetectors and their microstructure: On the origin of the photovoltaic effect. J. Appl. Phys. Luna, E; Trampert, A; Guzman... [+]
2005 Effect of the implantation temperature on lattice damage of Be+-implanted GaN. Semicond. Sci. Technol. Pastor, D; Cusco, R; Artus... [+]
2005 Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs. Miguel-Sanchez, J; Guzman, A; Ulloa... [+]
2005 GaN reactive ion etching using SiCl4 : Ar : SF6 chemistry. J. Mater. Sci.-Mater. Electron. Sillero, E; Calle, F; Sanchez-Garcia... [+]
2005 GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE. Phys. Status Solidi A-Appl. Mat. Ristic, J; Calleja, E; Fernandez-Garrido... [+]
2005 Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers. Appl. Phys. Lett. Damilano, B; Barjon, J; Duboz... [+]
2005 Impact of N on the lasing characteristics of GaInNAs/GaAs quantum well lasers emitting from 1.29 to 1.52 mu m. Appl. Phys. Lett. Ulloa, JM; Hierro, A; Montes... [+]
2005 Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes. Ulloa, JM; Hierro, A; Montes... [+]
2005 InGaAsN on GaAs (111)B for telecommunication laser application. J. Cryst. Growth Miguel-Sanchez, J; Guzman, A; Ulloa... [+]
2005 InN layers grown on silicon substrates: effect of substrate temperature and buffer layers. J. Cryst. Growth Grandal, J; Sanchez-Garcia, MA... [+]
2005 Magnetic properties of CoP alloys electrodeposited at room temperature. J. Magn. Magn. Mater. Lucas, I; Perez, L; Aroca... [+]
2005 Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates. Grandal, J; Sanchez-Garcia, MA; Calle... [+]
2005 Optimization of InGaAsN on GaAs (111)B for semiconductor laser devices.. Miguel-Sanchez, J; Guzman, A; Ulloa... [+]
2005 Performance improvement of 1.52 mu m (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates. Electron. Lett. Hugues, M; Damilano, B; Barjon... [+]
2005 Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications. J. Cryst. Growth Pau, JL; Pereiro, J; Rivera... [+]
2005 Pressure behavior of beryllium-acceptor level in gallium nitride. J. Appl. Phys. Teisseyre, H; Gorczyca, I; Christensen... [+]
