2008 A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy. Appl. Phys. Lett. Fernandez-Garrido, S; Gacevic, Z; Calleja... [+]
2008 AlGan/GaN-based saw delay-line oscillators. Microw. Opt. Technol. Lett. Grajal, J; Calle, F; Pedros... [+]
2008 Aluminium incorporation in AlxGa1-xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction. Thin Solid Films Redondo-Cubero, A; Gago, R; Gonzalez-Posada... [+]
2008 Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes. J. Phys. D-Appl. Phys. Montes, M; Hierro, A; Ulloa... [+]
2008 Band bending at the surfaces of In-rich InGaN alloys. J. Appl. Phys. Bailey, LR; Veal, TD; King... [+]
2008 Bowing of the band gap pressure coefficient in InxGa1-xN alloys. J. Appl. Phys. Franssen, G; Gorczyca, I; Suski... [+]
2008 Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy. J. Appl. Phys. Bejtka, K; Edwards, PR; Martin... [+]
2008 Dense and nearly jammed random packings of freely jointed chains of tangent hard spheres. Phys. Rev. Lett. Karayiannis, NC; Laso, M... [+]
2008 Domain walls and exchange-interaction in Permalloy/Gd films. New J. Phys. Ranchal, R; Aroca, C; Lopez... [+]
2008 Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy. J. Appl. Phys. Fernandez-Garrido, S; Redondo-Cubero, A; Gago... [+]
2008 Effects of N-2 plasma pretreatment on the SiN passivation of AlGaN/GaN HEMT. IEEE Electron Device Lett. Romero, MF; Jimenez, A; Sanchez... [+]
2008 Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111). Sillero, E; Lopez-Romero, D; Bengoechea... [+]
2008 Far-infrared transmission in GaN, AlN, and AlGaN thin films grown by molecular beam epitaxy. J. Appl. Phys. Ibanez, J; Hernandez, S; Alarcon-Llado... [+]
2008 Flexible chain molecules in the marginal and concentrated regimes: Universal static scaling laws and cross-over predictions. J. Chem. Phys. Laso, M; Karayiannis, NC... [+]
2008 Growth of Nitrogen-Doped MgxZn1-xO for Use in Visible Rejection Photodetectors. J. Korean Phys. Soc. Nakamura, A; Aoshima, T; Hayashi... [+]
2008 In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction. J. Appl. Phys. Fernandez-Garrido, S; Koblmuller, G; Calleja... [+]
2008 Influence of surface hydroxylation on 3-aminopropyltriethoxysilane growth mode during chemical functionalization of GaN surfaces: An angle-resolved X-ray photoelectron spectroscopy study. Langmuir Arranz, A; Palacio, C; Garcia-Fresnadillo... [+]
2008 Magnetic properties of permalloy multilayers with alternating perpendicular anisotropies. Eur. Phys. J. B Maicas, M; Ranchal, R; Aroca... [+]
2008 Modeling the effect of cell-associated polymeric fluid layers on force spectroscopy measurements. Part I: Model development. Langmuir Coldren, FM; Foteinopoulou, K; Carroll... [+]
2008 Modeling the effect of cell-associated polymeric fluid layers on force spectroscopy measurements. Part II: Experimental results and comparison with model predictions. Langmuir Coldren, FM; Foteinopoulou, K; Verbeeten... [+]
