2004 Correlation between interface structure and light emission at 1.3-1.55 mu m of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates. J. Vac. Sci. Technol. B Trampert, A; Chauveau, JM; Ploog... [+]
2004 Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes. Appl. Phys. Lett. Ulloa, JM; Hierro, A; Miguel-Sanchez... [+]
2004 Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy. IEE Proc.-Optoelectron. Miguel-Sanchez, J; Guzman, A; Ulloa... [+]
2004 Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates. Appl. Phys. Lett. Miguel-Sanchez, J; Guzman, A; Ulloa... [+]
2004 Efficiency optimization of p-type doping in GaN : Mg layers grown by molecular-beam epitaxy. J. Cryst. Growth Naranjo, FB; Calleja, E; Bougrioua... [+]
2004 Hybrid ferrite-amorphous planar fluxgate. J. Magn. Magn. Mater. Gonzalez-Guerrero, M; Perez, L; Aroca... [+]
2004 InGaAsN and GaAsN based quantum well lasers and detectors for optical sensing in 1.3 and 1.55 mu m. Guzman, A; Miguel-Sanchez, J; Luna... [+]
2004 Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy. Appl. Phys. Lett. Cusco, R; Artus, L; Pastor... [+]
2004 Magnetostatic interactions in bilayer films. Eur. Phys. J.-Appl. Phys Rivero, MA; Maicas, M; Lopez... [+]
2004 Modeling and fabrication of a MEMS magnetostatic magnetic sensor. Sens. Actuator A-Phys. Ciudad, D; Aroca, C; Sanchez... [+]
2004 Nitride-based photodetectors: from visible to X-ray monitoring. Superlattices Microstruct. Pau, JL; Rivera, C; Pereiro... [+]
2004 Novel photodetectors based on InGaN/GaN multiple quantum wells. Phys. Status Solidi A-Appl. Res. Rivera, C; Pau, JL; Naranjo... [+]
2004 Optoelectronic properties of 2-D and 3-D-grown GaInNAs/GaAs QW light emitting diodes and laser diodes. IEE Proc.-Optoelectron. Ulloa, JM; Hierro, A; Miguel-Sanchez... [+]
2004 Planar fluxgate sensor with an electrodeposited amorphous core. Sens. Actuator A-Phys. Perez, L; Aroca, C; Sanchez... [+]
2004 Properties of Schottky barrier photodiodes based on InGaN/GaN MQW structures. Superlattices Microstruct. Rivera, C; Pau, JL; Pereiro... [+]
2004 Remote collection and measurement of photogenerated carriers swept by surface acoustic waves in GaN. Appl. Phys. Lett. Palacios, T; Calle, F; Grajal... [+]
2004 Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet. J. Appl. Phys. Pau, JL; Rivera, C; Munoz... [+]
2004 Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3-1.5 mu m applications. Appl. Phys. Lett. Miguel-Sanchez, J; Guzman, A; Munoz... [+]
2004 Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy. J. Cryst. Growth Miguel-Sanchez, J; Hopkinson, M; Gutierrez... [+]
2003 Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy. J. Appl. Phys. Hierro, A; Ulloa, JM; Chauveau... [+]
