Next Tuesday we will hosting Dr Andrea Migliorini, former PHD student, now at Max Planck Institute for Microstructure Physics. Here's an abstract of his talk.
Recent developments in spintronic devices based on current-induced domain wall motion, including the realization of domain-wall logic operators [1], and the demonstration of unconventional computing characteristics at the nanoscale [2], have provided a significant contribution toward the implementation of magnetic racetrack applications [3-4], which hold great promise for the realization of 3D memory and logic architectures [5-6].
In this seminar, I will discuss our recent progress toward the implementation of domain-wall-based racetrack nanodevices, in terms of materials development, device engineering for advanced functionalities, and realization of working memory devices. First, we have recently introduced a new class of L10 binary alloys based on Al and 5d transition metals, which generate large spin-orbit torques and promote very efficient motion of domain walls driven by short current pulses [7]. Second, we have realized ferromagnetic-synthetic antiferromagnetic lateral junctions for improved domain-wall stability and efficient domain-wall injection in racetrack nanodevices [8]. We have also developed several key innovations that allow to dynamically manipulate domain walls at the nanoscale [9-10], thus enhancing the functionalities of conventional nanowire racetrack devices, including the possibility to compress and de-compress magnetic domain-wall bits, using either the passive variation of the current density which drives the domain walls, or the active control of a localized bias current [11]. Finally, I will present our latest results in terms of practical implementation of all-electrical domain-wall nanodevices for conventional and non-conventional memory technology [2].
[1] Z. C. Luo, A. Hrabec, T. P. Dao, G. Sala, S. Finizio, J. Feng, S. Mayr, J. Raabe, P. Gambardella and L. J. Heyderman, Nature 579, 214 (2020).
[2] J.-C. Jeon, A. Migliorini, J. Yoon, J. Jeong, and S. P. P. Parkin, Science 386, 315 (2024).
[3] S. S. P. Parkin, M. Hayashi and L. Thomas, Science 320, 190 (2008).
[4] S. S. P. Parkin and S.-H. Yang, Nat. Nanotechnol. 10, 195 (2015).
[5] K. Gu, Y. Guan, B. K. Hazra, H. Deniz, A. Migliorini, W. Zhang, and S. P. P. Parkin, Nat. Nanotechnol. 17, 1065 (2022).
[6] L. Skoric, C. Donnelly, A. Hierro-Rodriguez, M. A. Cascales Sandoval, S. Ruiz-Gómez, M. Foerster, M. A. Niño, R. Belkhou, C. Abert, D. Suess, and A. Fernández-Pacheco, ACS Nano 16, 8860 (2022).
[7] P. Wang, A. Migliorini, S.-H. Yang, J.-C. Jeon, I. Kostanovskiy, H. Meyerheim, H. Han, H. Deniz, and S. P. P. Parkin, Adv. Mater. 34, 2109406 (2022).
[8] J. Yoon, S.-H. Yang, J.-C. Jeon, A. Migliorini, I. Kostanovskiy, T. Ma, and S. P. P. Parkin, Nat. Nanotechnol. 17, 1183 (2022).
[9] S. P. P. Parkin, J.-C. Jeon, A. Migliorini, U.-H. Pi, US Patent US2023/0298649 A1 (2023).
[10] S. P. P. Parkin, J.-C. Jeon, A. Migliorini, U.-H. Pi, US Patent US2023/0274772 A1 (2023).
[11] J.-C. Jeon, A. Migliorini, L. Fischer, J. Yoon, and S. P. P. Parkin, ACS Nano 18, 14507 (2024).
