Research Prospects for MBE - Where are we heading?
Dr. Roman Engel-Herbert in this talk, Prof. Roman Engel-Herbert will present the fundamental challenges present of using a conventional molecular beam epitaxy approach for the growth of complex oxides and will outline an alternative - a hybrid synthesis approach - as a possible way out to overcome the existing challenges. Promising results obtained by MBE of hybrid oxides will be presented along with the most recent advances in material quality achieved in thin films of complex oxides with perovskite structure. A perspective will be given on the possibility of extending this growth method to larger substrates and at higher growth rates, which would highlight its potential importance in an industrial environment. MBE could again be the growth technique that enables the translation of fundamental advances from the laboratory to industry, playing a key role in the realization of the second quantum revolution..
Short biography
Prof. Engel-Herbert is the Director of the Paul-Drude-Institute for Solid State Electronics, a Leibniz Institute in the Forschungsverbund Berlin e.V., and is holding a W3-S faculty position at the Humboldt University of Berlin.
His research interests are centered around the growth of thin films and heterostructures using molecular beam epitaxy of III-V and III-nitride compound semiconductors, and in particular of functional oxide-, and chalcogenidebased materials. This includes the scale-up and integration of these compounds with established material platforms, as well as the development of innovative thin film synthesis methods to achieve unprecedented control over stoichiometry and layering. Synthesis efforts to rapidly develop and mature these novel material systems are complemented by property characterization and device fabrication activities to explore and harness the so far unexploited electronic and optical functionalities arising from sizeable electron correlation effects, strong spin-orbit coupling, and non-trivial topological states for applications in quantum technology. The properties of these rationally designed and artificially crafted crystal structures are tailored by arranging elements with atomic precision.
Engel-Herbert has co-pioneered hybrid MBE that enables the growth of complex oxides with an unprecedented level of perfection. He has recently demonstrated that perovskite thin films can be integrated on Si using this scalable growth technique and has made substantial contribution to the development of high-k dielectrics on compound semiconductors for beyond Si CMOS technology. His most notifiable breakthrough was the discovery of a novel design paradigm for transparent conductors.
