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Electronics 5.0: New Materials and Devices for Edge Intelligence

  • Prof. Tomás Palacios, MIT, Cambridge, MA 02138, 12:30 h, Salón de Grados (ETSIT)

The end of traditional transistor scaling brings unprecedented new opportunities to semiconductor devices and electronics. We are at the beginning of a new technological revolution, which will focus on distributed intelligence and push the boundaries of sensing and computing at the edge of the cloud. This seminar will describe some of the current challenges and opportunities in modern microelectronics, and about the work that Palacio's group at MIT is doing on new materials and devices, including
1. Gallium Nitride CMOS
1. Gallium Nitride CMOS FinFET Amplifiers gallium for much more efficient communications;
2. Single layer thick molybdenum disulfide wi-fi energy harvesters to make ubiquitous electronics possible; and
3. A new generation of cell-sized autonomous electronic devices.
3. A new generation of cell-sized autonomous electronic microsystems to revolutionize invisible sensing. The seminar will conclude with a reflection on how the democratization of heterogeneous integration, the unique properties of extreme materials, and the opportunities of distributed intelligence will transform our society just as Moore's Law has done over the past 50 years.